By D. J. Fisher
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Additional resources for A Directory of Arrhenius Parameters: Metals
Electron microprobe techniques were used to measure the Si distribution. 81(eV)/kT] The values were much higher than those measured in wrought Al. 0008mm. Queirolo: Thin Solid Films, 1985, 128[3-4], 217-23  Al: Si Diffusion Classical diffusion equations were applied to the interdiffusion of a sandwich of amorphous Si and Al at 470 to 570C. Izmirilyan: Solid State Electronics, 1982, 25, 1187-8  Al: Sn Diffusion The temperature and pressure dependences of the diffusion of 113Sn which had been implanted into high-purity single crystals were investigated by using the serial sectioning technique.
25(eV)/kT] These results agreed with those for bulk material. Tu: Journal of Applied Physics, 1983, 54, 6929-37  Al2Cu: Cu Diffusion 40 A Directory of Arrhenius Parameters Markers (15nm) of W were deposited between Cu and Al thin-film bilayers, and the displacements were measured during the growth of Al2Cu at 160 to 250C. 40(eV)/kT] These results agreed with those for bulk material. Tu: Journal of Applied Physics, 1983, 54, 6929-37  Al-Cu-Fe: Fe Grain Boundary Diffusion The atomic diffusion of 59Fe in an icosahedral alloy was studied by using sectioning methods at temperatures ranging from 568 to 799C.
It was found that the Arrhenius plot exhibited a change in apparent activation energy for diffusion at about 900K. 0(kJ/mol)/RT] A simple model was developed in order to explain the grain-size dependence of the diffusivity. A decrease in diffusivity at lower temperatures, for smaller grain sizes, was attributed to trapping of the H at the nodes of grain boundaries. At very large grain sizes, fast diffusion could occur along the grain boundary. Imabayashi: Materials Transactions, 1991, 32, 110914  Al: He Diffusion By measuring the He released during isothermal and ramp heating, it was possible to determine the diffusion coefficients of isolated He atoms.
A Directory of Arrhenius Parameters: Metals by D. J. Fisher